CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices, a key component in ...

Double-pulse testing will play a pivotal role in the future of power electronics. Power designers and system engineers rely on it to evaluate the switching characteristics of power semiconductors such ...

Can engineers address the AI power crisis from inside the data center? This special report highlights how power supplies are evolving to handle the current and future demands of AI. AI is siphoning ...

A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.

When you walk the halls of the TPCA Show Taipei 2025, one theme is impossible to miss: AI is no longer the future-it's the engine driving the next great wave of electronics manufacturing. From cloud ...