A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started providing engineering samples of “ TB9104FTG ,” a ...

Local power that is available for protection circuits, such as desaturation detection. Among the disadvantages of this type of driver are the cost, complexity and board space required for all the ...

This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...

MOSFET switching determined to be the source of the damping resistance, as demonstrated using a forward converter SPICE model. The process of correlating SPICE models to bench data often leads to ...

Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed ...

Toshiba Electronics Europe has launched a high speed, high current gate drive photo IC, designed to directly drive middle capacity IGBTs or power mosfets in an extended operating temperature range of ...

The insulated gate bipolar transistor (IGBT) has been around for about 30 years as a commercially available product, and has been through several generations of successively improved performance and ...

Guest columnist Baoxing Chen, senior staff engineer at Analog Devices, says that designing a motor-control system presents two main challenges. First, the design requires sending accurate motor ...