Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

Toshiba Electronics Europe has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances ...

Optimized for soft-switching applications, such as induction cooktops and microwave ovens, the IRG7PK35UD1PBF 1400-V CES IGBT (insulated gate bipolar transistor) from International Rectifier is ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...

Automotive diode demand has started picking up since July after staying stagnant for months, and Taiwanese makers are stepping up deployments in IGBT and SiC power components seeking to gain from ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...