Researchers show that Cartan's First Structure Equation, which relates to edge and screw dislocations in crystal lattices, can be recast in the same form as a basic mathematical formula that governs ...
LIVERMORE, Calif. – Researchers have found a new tool to explore materials at extreme conditions. By combining very large-scale molecular dynamics simulations with time-resolved data from laser ...
In 2014, a theory showed that the electronic structure of iron-based superconductor has topological properties due to the multi-orbit characteristics under certain conditions, which is similar to the ...
As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects.
Researchers show that Cartan's First Structure Equation links crystal defects to the same mathematical rules governing electric currents and magnetic fields. (Nanowerk News) A fundamental goal of ...
Plastic deformation of crystalline materials with isotropic particle attractions proceeds by the creation and migration of dislocations under the influence of external forces. If dislocations are ...
A paper was recently published in Advanced Theory and Simulations by Pratik Dholabhai, Assistant Professor in the School of Physics and Astronomy at RIT. Professor Dholabhai obtained his M.S. in ...
A paper was recently published in Advanced Theory and Simulations by Pratik Dholabhai, Assistant Professor in the School of Physics and Astronomy at RIT. Professor Dholabhai obtained his M.S. in ...
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