A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...

The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...

Successful development of high-performance amorphous P-type oxide semiconductor using tellurium-selenium composite oxide. Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang ...

A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges” was published by researchers at imec and Hanyang ...

Doing anything that requires measurements in nanometers is pretty difficult, and seems like it would require some pretty sophisticated equipment. But when the task at hand is growing oxide layers on ...

Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...

Researchers reported a deposition process for nanosheet oxide semiconductor. The atomic layer deposition technique was demonstrated for producing field effect transistors for 3D integrated circuits at ...

Kioxia Corp. announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was ...

OXIDE Corp. (JP:6521) has released an update. OXIDE Corporation is set to transfer its R&D, manufacturing, and sales business for power semiconductor materials to its newly established subsidiary, ...