NoMIS Power Corp. has claimed significant reductions in on-resistance for its next-generation platform of 1.2-kV planar SiC MOSFETs. This was achieved by optimizing device design and process steps, ...
The key electronic component in the integrated circuit (IC) is the planar, bulk metal-oxide semiconductor field-effect transistor (MOSFET). A key driver for the IC industry has been Moore's Law, which ...
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy ...
Successfully develops SiC Planar MOSFET process platform for 450V–2300V, securing high reliability and yield competitiveness Accelerates SiC-based compound semiconductor foundry business by initiating ...
The company's advanced planar MOSFET stripe structure topology is used in six new MOSFETs that are claimed to offer the industry's best figure of merit. The new devices also promise lower ...
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC ...
Suppliers of power semiconductors continue to develop and ship devices based on traditional silicon technology, but silicon is nearing its limits and faces increased competition from technologies like ...
Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm. “Compared to existing planar-type SiC mosfets, on-resistance is reduced by 50% in the same chip size, ...
TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power ...
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