GaN based HEMTs (high electron mobility transistors) offer efficiency, density and cost advantages compared with silicon based devices. These features should result in widespread adoption of GaN ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...
At the Applied Power Electronics Conference & Exposition (APEC 2025), celebrating its 40th year, over 300 exhibitors showcased their latest component advances for system power designers across a wide ...
High voltage power semiconductor devices are integral components in modern electrical systems, enabling efficient switching and control in a range of applications from renewable energy converters to ...
And the reason for this is because there is so much at stake.” Cars and planes need to be extremely reliable because people ...
Single event burnout (SEB) represents a critical failure mode in power semiconductor devices, whereby the impact of a single energetic particle – often encountered in space or high-radiation ...
Texas Instruments Inc. (TI) announced several power management devices and a reference design to help companies meet AI computing demands and scale power management architectures from 12 V to 48 V to ...
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