V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...
Silicon carbide (SiC) is best known as the wide-bandgap material driving high-efficiency power electronics that support the green transition. Yet its potential reaches beyond power electronics. SiC’s ...
Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...
NXP Semiconductors has announced a collaboration with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules in e-mobility. The project is intended to provide ...
Research reported in the Japanese Journal of Applied Physics by researchers at Mitsubishi Electric Corporation describes the development of a new power module made from a SiC metal-oxide-semiconductor ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Made by Cissoid and called CMT-PLA3SB12340, it can supply its 26A at 90°C, and up to 340A at 25°C. This is a complete power module, including output-to-baseplate (5kVdc for 1min) and input-to-output ...
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