EDN

Models for high-voltage transistors in a standard CMOS process

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...
Electronics Weekly

Mosfet model raises accuracy

Philips has developed an advanced Mosfet compact model intended to provide a more accurate description of device behaviours for the 90nm, 65nm and 45nm process generations. Compact models are used as ...
Design-Reuse

How Verilog-AMS accelerates transistor modeling

Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...
EDN

Philips, Penn State refine surface potential transistor model

LONDON — Scientists from Philips Research (Eindhoven, The Netherlands) and The Pennsylvania State University have developed a model of metal-oxide semiconductor field effect transistor (MOSFET) ...